Density based traffic signal system using image processing

Contact Me for Project Prize Mail Id:  tamilblogelectronic@gmail.com Measure Traffic density and ambulance detection in Realtime project. What We Do in This Project: (Both Software & Hardware Project Available) ( i) Traffic Density Measure - Realtime (Means using Traffic Camera or Traffic Video) First,  we do Vehicle Detection in Video/Camera using Image Processing. Second, we Count the Vehicle We Detected in Video/Camera using Image Processing. Third, We Compare Two lane Vehicle Density in Video/Camera , if lane detect more no. of vehicle will be Prioritized first.   (ii) Ambulance Detection in Single Lane  - Realtime (Means using Traffic Camera or Traffic Video) : First, We Collect the Images of Ambulance. Second, we train our Image model using sample ambulance image. using Yolo image Model, we able to Detect the Ambulance in Video/ Camera. (iii) Ambulance Detection in Multiple Lane  - Realtime (Means using Traffic Camera or Traffic Vid...
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Twin-Well CMOS Process

 The twin-well employs two separate wells CMOS structure which are implanted into very lightly doped silicon. 


This allows the doping profiles in each well to be tailored independently so that neither type of device will suffer from excessive doping effects. 


The lightly doped silicon is usually an epitaxial layer grown on a heavily doped silicon substrate. The substrate can be either n-type or p-type. 



The Process steps for a twin-well CMOS structure



i) The starting material is lightly doped epitaxial layer over a heavily doped n+ <100> orientation substate.


 ii) A composite layer of SiO2 and Si3N4 is defined and silicon is exposed over the n-well region. Phosphorus is implanted as the n-well dopant at low energy and enters the exposed silicon, but is masked from the adjacent region by Si3N4.


 iii) The wafers are then selectively oxidized over the n-well regions. The nitride is stripped and boron is implanted for the p-well. The boron enters the silicon through the thin oxide but is masked from the n-well by the thicker Si02 Layer. 


iv) All oxides are then stripped and the two wells are subject to drive-in diffusion. After the wells are formed, the formation of the field oxide and gates is identical to that discussed earlier for the NMOS process. 


v) The threshold adjustment implants can be made into the channel regions of the devices to adjust the threshold voltages of the n- and p-channel transistors individually. The sources and drains are self aligned to the gate as they were in the NMOS process. However, it is necessary to selectively implant the n-channel and p-channel source/drains to form n+ regions for the n-channels and p+ regions for the p-channels. This can be done by using one mask. The one mask technique consists of implanting boron non selectively into all the sources and drains. This is followed with a selective implant of phosphorus or arsenic into the n- channel source/drain regions at a higher dose, so that it over compensates the boron. After the subsequent thermal cycles, the phosphorus or arsenic completely covers the boron vertically and laterally. 


vi) A phosphorus glass layer is later deposited and windows are etched. 


vii) Aluminium metallization is defined using dry etching. The final layer is a plasma-deposited silicon- nitride layer that seals the devices and provides mechanical scratch protection. The final structure.

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