Density based traffic signal system using image processing

Contact Me for Project Prize Mail Id:  tamilblogelectronic@gmail.com Measure Traffic density and ambulance detection in Realtime project. What We Do in This Project: (Both Software & Hardware Project Available) ( i) Traffic Density Measure - Realtime (Means using Traffic Camera or Traffic Video) First,  we do Vehicle Detection in Video/Camera using Image Processing. Second, we Count the Vehicle We Detected in Video/Camera using Image Processing. Third, We Compare Two lane Vehicle Density in Video/Camera , if lane detect more no. of vehicle will be Prioritized first.   (ii) Ambulance Detection in Single Lane  - Realtime (Means using Traffic Camera or Traffic Video) : First, We Collect the Images of Ambulance. Second, we train our Image model using sample ambulance image. using Yolo image Model, we able to Detect the Ambulance in Video/ Camera. (iii) Ambulance Detection in Multiple Lane  - Realtime (Means using Traffic Camera or Traffic Vid...
Post a Comment

Silicon-on-Sapphire (SOS) CMOS Process and Drawbacks

 The silicon-on-sapphire (SOS) CMOS structure is a heteroepitaxial CMOS structure in which a thin (~1 μm) single crystal silicon epitaxial layer is deposited on a highly polished single-crystal sapphire substrate.


 The silicon film is doped n+ and p+ by phosphorus and boron ion implantation, followed by an annealing or drive-in diffusion step, as required. The thin silicon film is then etched into many separate NMOS and PMOS devices and interconnected by the metallization pattern. 


The (SOS) CMOS structure is an example of a dielectrically isolated IC, and the use of the insulating substrate results in a greatly reduced parasitic capacitance. This leads to a very high-speed device performance and very low power dissipation. 


These features are especially useful for very high-speed, high-density ICs. 


The Steps in the SOS CMOS process 


 i) The starting wafer is sapphire (aluminium oxide, Al203) on which silicon, whose crystal lattice is compatible with that of sapphire. 


ii) The active regions are isolated by chemically etching the silicon between the areas. The first mask defines the active regions. The active islands are then doped to be n-type or p-type by implantation steps . This can be done by using two separate masks for the n- and p-type implantation or by a uniform implantation followed by a counter doping step using a single mask. 


iii) Thin oxide is now grown by oxidation. The polysilicon is deposited on top of it to form the gate terminals and is patterned with a fifth mask. 


iv) The source and drain regions are now formed by implantation  using two separate masks or a pair of complementary masks. This implantation step is made rather deep so that doping penetrates all the way through the silicon. 


v) A thick layer of oxide is now grown over the entire wafer to protect the structure. An eighth mask is used to cut contact holes. Metal is now deposited and patterned by a ninth mask. The last mask is used to produce a protective layer that covers everything but the bonding pads. 


The SOS process has two drawbacks: 


(i) The dielectric constant of sapphire is high compared with that of silicon. This results in a higher coupling capacitance in the adjacent wires, which gets worse with scaling (offsetting the reduced junction capacitance). This affects the speed adversely. 


(ii) Sapphire is an expensive raw material which may be more suitable for jewelry than for transistors

Comments

Post a Comment

Welcome

Popular Post

boost::filesystem::remove: The process cannot access the file because it is being used by another process in VIVADO (XILINUX)

Image
( Note :   Click Label To Check various Topics like Diodes,Rectifier,etc.) Contact   tamilblogelectronic@gmail.com And other social media for Soft copies of any Book.   Final Year Engineering Project ( both Hardware and Software Project) :   Density Based Traffic control for Smart Ambulance System using Image Processing    Click Here   - Electronics Project Ambulance Detection Project In Vivado If You Run A Program With Both Main Module And Test Bench And You Try To Run Other Program In the Same Project Will You Will Get This Error  boost::filesystem::remove: The process cannot access the file because it is being used by another process in VIVADO If You Try To Run A Different Code In Same Project (I.e First You Tried Is Full Adder Second You Try To Run A Half Adder Or Any Thing With Correct Code(I.e Without Error In That Code) ) You May Get An Error As  boost::filesystem::remove: The process cannot access the file because it is being ...
Click To Read

Verilog Project

Image
( Note :   Click Label To Check various Topics like Diodes,Rectifier,etc.) Contact   tamilblogelectronic@gmail.com  And other social media for Soft copies of any Book. Traffic Light at Junction Let Us Go To The Logic Of The Project:  Logic Is More Important Than Code. Four Roads So Four Traffic Light: 1st traffic light is n_lights ( north direction light) 2nd  traffic light is e_lights   ( east direction light) 3rd  traffic light is s_lights   ( south direction light) 4th  traffic light is w_lights  ( west direction light) For n_lights: conditions: I am going 3bit  if 001 - GREEN     010 - YELLOW    100 - RED  For e_lights: conditions: I am going 3bit  if 001 -  GREEN     010 -  YELLOW    100 -  RED  For s_lights: if 001 -  GREEN     010 -  YELLOW    100 -  RED  For w_lights: if 001...
Click To Read

HOW TO CREATE PROJECT IN VIVADO (XILINUX) AND TEST BENCH

Image
      ( Note :   Click Label To Check various Topics like Diodes,Rectifier,etc.) Contact   tamilblogelectronic@gmail.com  And other social media for Soft copies of any Book.   AFTER INSTALL XILINUX  STEP 1 :CLICK ICON TO OPEN STEP 2: AFTER ITS OPENED THE SCREEN WILL BE LIKE THIS  STEP 3 : CLICK CREATE PROJECT AFTER YOU CLICKED CREATE PROJECT WILL BE LIKE THIS BELOW IMAGE: AFTER CREATE PROJECT CLICK NEXT THIS TAB WILL SHOW CLICK PROJECT NAME AND NAME THE PROJECT AND CLICK NEXT AFTER CLICK NEXT THIS TAB WILL SHOW CHOOSE RTL PROJECT AND CLICK NEXT CLICK CREATE FILE TO ADD SOURCE NAME AND TYPE SOURCE NAME AS LIKE GATE MODELLING MEANS    (gate_dff )  dff means d flipflop AFTER NAMED SOURCE WILL BE LIKE THIS CLICK NEXT CLICK NEXT THIS IS VERY IMPORTANT  CATEGORY : GENERAL PURPOSE PACKAGE : fb 484 SPEED : -1 FAMILY : KINTEX 7 AFTER YOU DID PREVIOUS STEPS ONLY TWO ROW WILL  BE THERE IN BOTTOM BOX.   CLICK ANY ...
Click To Read

fir filter advantages and disadvantages

 What is FIR Filters? The filters designed by using finite number of samples of impulse response are called FIR filters. These finite number of samples are obtained from the infinite duration desired impulse response h (n). Here h (n) is the inverse fourier transform of H (O), where H (0) is the ideal (desired) frequency response. The various methods of designing FIR filters It differs only in the method of determining the samples of h(n) from the samples of h (n). The various steps in designing FIR filter are i) Choose an ideal (desired) frequency response, H.(w). ii) Take inverse fourier transform of H (w) to get h,(n) or sample H, (o) at finitenumber of points (N-point) to get Ĥ(k). iii) If h (n) is determined, then convert the infinite duration h (n) to a finite duration h(n). (usually h(n) is an N-point sequence) or If ħ(k)is determined then take Npoint inverse DFT to get h(n). iv) Take Z-transform of h(n) to get H(z), where H(z) is the transfer function of the digital filter...
Click To Read