PROCESS STEPS IN IC FABRICATION
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The monolithic IC is one in which all circuit components are fabricated into or top of a block of silicon which is referred to as chip (or die). Interconnections between the components within the chip are made by means of metallization patterns, and the individual components are not separable from the circuit.
The processing steps used to fabricate various silicon devices, such as diodes, transistors, and integrated circuits are as follows:
1. Refining and growth of Silicon Crystals
2. Si Wafer preparation
3.Oxidation
4. Photolithography
5. Diffusion (and ion implantation) of dopant impurities
6. Chemical vapour deposition (including epitaxy)
7. Metallization.
8. Testing and chip separation
9. Packaging The fabrication of devices starts with single-crystal silicon wafers.
Then the processes listed above can be used to produce discrete devices (i.e., individual diodes and transistors) and ICs.
These devices or ICs will be in wafer form with tens, hundreds, or even thousands of discrete devices or ICs on the same silicon wafer.
The wafer is then divided up to obtain the individual dice or chips.
These chips are then encapsulated or packaged, with a wide variety of packages and packaging methods being possible.
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