Density based traffic signal system using image processing

Contact Me for Project Prize Mail Id:  tamilblogelectronic@gmail.com Measure Traffic density and ambulance detection in Realtime project. What We Do in This Project: (Both Software & Hardware Project Available) ( i) Traffic Density Measure - Realtime (Means using Traffic Camera or Traffic Video) First,  we do Vehicle Detection in Video/Camera using Image Processing. Second, we Count the Vehicle We Detected in Video/Camera using Image Processing. Third, We Compare Two lane Vehicle Density in Video/Camera , if lane detect more no. of vehicle will be Prioritized first.   (ii) Ambulance Detection in Single Lane  - Realtime (Means using Traffic Camera or Traffic Video) : First, We Collect the Images of Ambulance. Second, we train our Image model using sample ambulance image. using Yolo image Model, we able to Detect the Ambulance in Video/ Camera. (iii) Ambulance Detection in Multiple Lane  - Realtime (Means using Traffic Camera or Traffic Vid...

Advantage and Disadvantage of CMOS & Application of CMOS

 Advantages of CMOS :


1. Minimum feature size 

2. Low static power consumption 

3. Gate propagation delay in the order of nanoseconds 

4. Consumes very low power, particularly, at low frequency. 

5. The large logic voltage swing, with the high-state output voltage being very close to +VDD 

6. The low-state output voltage dropping is very close to either ground potential or the negative supply voltage. 

7. CMOS provides lower delay and lower dc power dissipation 


Applications: 

1. Prime choice for high speed, high density applications. 

2. And also in applications requiring minimum power.


 Disadvantages:


 1. CMOS requires greater process complexity and increased chip area (about 10 to 30 % compared to NMOS). 

2. CMOS design is to have both p-channel and n- channel transistors on the same wafer. This leads to two different approaches to CMOS: the traditional p-well approach with proven reliability and the newer n-well approach. With the p-well approach, the starting substrate is n-type, which contains the p-channel transistors and deep p-type doped areas called the "p-well", where n-channel transistors are created. The p well approach produces balanced performance of the p- and n-channel transistors because of two opposite factors. The n-channel devices have higher conductivity (about twice the conductivity of p-channel devices) and transistors of any type produced in a well have less speed than those built into a clean substrate by doping. It is also easier to produce a p-well in an n-substrate rather than an n-well in a p-substrate. The p well process also has reduced alpha-particle sensitivity. 

3. The n-well approach, on the other hand, produces the n-channel transistors in p-type substrate and the n channel transistors in an n-well, which actually increases the performance difference between the p-and n channel transistors. It has been claimed that the n-well approach is compatible with the NMOS process using about 20% more processing steps. The NMOS and CMOS processes can share processing steps and substrate material, which is an advantage for high-volume production. The n-well process also provides reduced latch-up sensitivity, improved n-channel performance, and low cost.There are a large number and variety of basic fabrication steps used in the production of CMOS devices. The metal-gate process is the simplest to describe.

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